Title :
Temperature-dependent Sellmeier equation for the refractive index of AlxGa1-xAs in the 1.46∼1.58 μm range
Author :
Kim, Jang Pyo ; Surangan, A.M.
Author_Institution :
Electro-Opt. Program, Dayton Univ., OH, USA
Abstract :
In this paper, we present a temperature-dependent Sellmeier equation for AlxGa1-xAs. This is a ternary alloy that is lattice matched to GaAs over the entire composition range and is the most commonly used alloy in semiconductor optoelectronic devices. Not only can aluminum mole fraction change the refractive index, but temperature can also play an important role. Thus, it would be of great interest to investigate the temperature-dependent variation of the refractive index of AlxGa1-xAs. This will be useful for in-situ monitoring when a sample is grown by molecular beam epitaxy (MBE) techniques. The experimental sample consisted of a GaAs DBR cavity with 18 pairs of GaAs/AlAs for top DBR stack and 22 pairs of GaAs/AlAs for bottom DBR stack. This structure is used to characterize and extract the parameters for the Sellmeier equation.
Keywords :
III-V semiconductors; aluminium compounds; cavity resonators; distributed Bragg reflectors; gallium compounds; molecular beam epitaxial growth; refractive index; semiconductor epitaxial layers; semiconductor materials; AlxGa1-xAs; GaAs distributed Bragg reflectors cavity; GaAs-AlAs; aluminum mole fraction; molecular beam epitaxy technique; refractive index; semiconductor optoelectronic device; temperature-dependent Sellmeier equation; temperature-dependent variation; ternary alloy; Aluminum alloys; Distributed Bragg reflectors; Equations; Gallium alloys; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Optoelectronic devices; Refractive index; Temperature;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568089
