DocumentCode

2898564

Title

A new, insulated-gate transistor

Author

Tombs, N. ; Wegener, H. ; Wheeler, R. ; Kenney, B. ; Coppola, A.

Author_Institution

Sperry Rand Research Center, Sudbury, MA, USA

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

58

Lastpage

59

Keywords

Dielectric substrates; Diodes; Electrodes; FETs; Fabrication; Insulation; MOS capacitors; Silicon on insulator technology; Surface treatment; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157687

Filename

1157687