DocumentCode :
2898583
Title :
New oxidation layers for GaAs-based vertical emitters
Author :
Leinonen, P. ; Leinonen, T. ; Viheriälä, J. ; Lyytikäinen, J. ; Dumitrescu, M. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
328
Abstract :
We have studied the use of low-In-content AlyIn1-yAs in the oxidation layer structure of GaAs-based vertical light emitters and compared the results to those obtained using AlxGa1-xAs layers. We have also observed a new crystallographic dependency of the oxidation rate that could play a role in the polarization control of vertical cavity light emitters.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; oxidation; surface emitting lasers; AlxGa1-xAs; AlyIn1-yAs; GaAs; GaAs-based vertical light emitter; crystallographic dependency; oxidation layer; polarization control; Aluminum oxide; Annealing; Apertures; Crystallography; Delamination; Digital alloys; Gallium arsenide; Geometry; Light emitting diodes; Oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1568111
Filename :
1568111
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2898583
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