• DocumentCode
    2898583
  • Title

    New oxidation layers for GaAs-based vertical emitters

  • Author

    Leinonen, P. ; Leinonen, T. ; Viheriälä, J. ; Lyytikäinen, J. ; Dumitrescu, M. ; Pessa, M.

  • Author_Institution
    Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Firstpage
    328
  • Abstract
    We have studied the use of low-In-content AlyIn1-yAs in the oxidation layer structure of GaAs-based vertical light emitters and compared the results to those obtained using AlxGa1-xAs layers. We have also observed a new crystallographic dependency of the oxidation rate that could play a role in the polarization control of vertical cavity light emitters.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; oxidation; surface emitting lasers; AlxGa1-xAs; AlyIn1-yAs; GaAs; GaAs-based vertical light emitter; crystallographic dependency; oxidation layer; polarization control; Aluminum oxide; Annealing; Apertures; Crystallography; Delamination; Digital alloys; Gallium arsenide; Geometry; Light emitting diodes; Oxidation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1568111
  • Filename
    1568111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2898583