Title :
InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55μm
Author :
Ok, Seong Hae ; Byun, Young Tae ; Son, Chang Wan ; Moon, Yon Tae ; Choi, Young Wan ; Oh, Jae Eung ; Lee, Seungho ; Jhon, Young Min ; Woo, Deok Ha ; Lee, Seok ; Kim, Sun Ho
Author_Institution :
Photonics Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
In this paper, we have fabricated EO modulators using InAs/lnGaAs columnar QDs, and measured the modulation characteristics. The switching voltage is about 6.1 V and the modulation efficiencies of QD EO modulators are higher than those of bulk modulators at 1.55 μm.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor devices; semiconductor quantum dots; 1.55 micron; EO modulator; InAs-InGaAs; columnar QD; modulation characteristics; modulation efficiency; modulator fabrication; quantum dot Mach-Zehnder modulator; switching voltage; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; Indium gallium arsenide; Quantum computing; Quantum dots; Quantum well devices; US Department of Transportation; Voltage;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568112
