Title :
Si-based D-band frequency conversion circuits
Author :
Dong-Hyun Kim ; Jongwon Yun ; Jae-Sung Rieh
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; frequency dividers; low-power electronics; mixers (circuits); BiCMOS technology; D-band frequency conversion circuits; Korea University; SiGe; frequency 140 GHz; injection-locked frequency dividers; low power mixers; wide locking range; CMOS integrated circuits; Mixers; Radio frequency; Silicon; Silicon germanium; Topology; CMOS; SiGe; frequency dividers; mixers;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6407087
