Title :
SiGe BiCMOS technology for mm-wave systems
Author :
Rucker, Holger ; Heinemann, B.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
This paper reviews a 0.13 μm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies fmax of 500 GHz, transit frequencies fT of 300 GHz, and CML ring oscillator gate delays of 2.0 ps. The HBTs exhibit breakdown voltages BVCEO of 1.6 V and BVCBO of 5.1 V. The improvement of RF performance compared to the preceding HBT generation is attributed to scaled lateral device dimensions, modified vertical doping profiles, a reduced thermal budget, a lower silicide resistance, and a changed wafer orientation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; BiCMOS technology; HBT; SiGe; bipolar MIMIC; frequency 300 GHz; frequency 500 GHz; heterojunction bipolar transistors; ring oscillator gate delays; scaled lateral device dimensions; silicide resistance; size 0.13 mum; thermal budget; vertical doping profiles; voltage 1.6 V; voltage 5.1 V; wafer orientation; BiCMOS integrated circuits; Delay; Heterojunction bipolar transistors; Logic gates; OFDM; Resistance; Silicon germanium; Heterojunction bipolar transistors; millimeter wave bipolar integrated circuits; millimeter wave devices; silicon alloys; silicon bipolar/BiCMOS technology;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6407091
