DocumentCode

2898858

Title

The comparative performance of epitaxial FET´s with junction FET´s and bipolar transistors at VHF

Author

Lane, R.

Author_Institution

Fairchild Semiconductor, Palo Alto, CA, USA

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

110

Lastpage

111

Keywords

Admittance; Bipolar transistors; Circuit noise; FETs; Frequency; Noise figure; Noise measurement; Performance gain; Semiconductor device noise; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157705

Filename

1157705