Title :
A 150-nanosecond associative memory using integrated MOS transistors
Author :
Igarashi, R. ; Kurosawa, T. ; Yaita, T.
Author_Institution :
Nippon Electric Co., Ltd. Kawasaki, Japan
Keywords :
Associative memory; Flip-flops; MOSFETs; Protection; Pulse amplifiers; Resistors; Signal generators; Signal to noise ratio; Thin film circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1966.1157714
