DocumentCode

2899200

Title

Invited: Amplification and Gunn oscillation in two-valley semiconductors

Author

Foyt, A.

Author_Institution

MIT Lincoln Laboratory, Lexington, MA

Volume

IX

fYear

1966

fDate

9-11 Feb. 1966

Firstpage

84

Lastpage

85

Keywords

Blades; Electron devices; Electron mobility; Epitaxial layers; Gallium arsenide; Gunn devices; Iron; Microwave oscillators; Semiconductor diodes; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1966 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1966.1157724

Filename

1157724