A simple method to measure very low currents to evaluate the effect of damage caused by contact formation near the isolation edges in high-density LSIs

The authors propose a simple, sensitive new method that uses a three-transistor-type MOS memory cell for the measurement of very low p-n junction leak current levels, typically about 10 fA. The method is effective for evaluating the effect of damage caused by contact formation near the isolation edges, and thus allows precise control of the fabrication process for high-density LSI devices. The method was used to investigate the effects of damage caused when using different isolation methods and annealing temperatures after contact etching