Title :
The Influence Of Preoxidation Cleaning Chemistry And Wafer Substrate On Thin Gate Oxide Defect Density
Author :
Triplett, B.B. ; Tran, M. ; Aminzadeh, M.
Author_Institution :
Intel Corporation
Keywords :
Atomic layer deposition; Chemistry; Degradation; Erbium; Hafnium; Quantum mechanics; Rough surfaces; Silicon; Surface cleaning; Surface roughness;
Conference_Titel :
Wafer Level Reliability Workshop, 1992. Final Report., 1992 International
Conference_Location :
Lake Tahoe, CA, USA
DOI :
10.1109/IWLR.1992.657990
