Effective channel length determination using punchthrough voltage

Author

Nakanishi, S. ; Höijer, M. ; Saitoh, Y. ; Katoh, Y. ; Kojima, Y. ; Kamiya, M.

Author_Institution

Seiko Instruments Inc., Chiba, Japan

fYear

1992

fDate

16-19 Mar 1992

Firstpage

73

Lastpage

77

Abstract

A new method for effective channel length (L_eff) determination using the punchthrough phenomenon in short-channel MOSFETs is proposed. The punchthrough voltage of short-channel MOSFETs is a strong function of L_eff. Single doped drain and lightly doped drain (LDD) MOSFETs were evaluated by means of this method, which is called the punchthrough method. The punchthrough method gave excellent results in terms of relative measurement accuracy, reproducibility, and resolution. The L_eff determined by the punchthrough method does not depend on the parasitical resistance of the source and drain region. Because of its high resolution and simplicity, this punchthrough method can be very useful for Leff monitoring in manufacturing

Keywords

insulated gate field effect transistors; production testing; semiconductor device manufacture; semiconductor device testing; effective channel length; lightly doped drain; manufacturing; measurement accuracy; parasitical resistance; punchthrough voltage; reproducibility; resolution; short-channel MOSFETs; single doped drain; Electric resistance; Electrical resistance measurement; Electrodes; Fabrication; Instruments; MOSFETs; P-n junctions; Reproducibility of results; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185941

Filename

185941