Title :
Effective channel length determination using punchthrough voltage
Author :
Nakanishi, S. ; Höijer, M. ; Saitoh, Y. ; Katoh, Y. ; Kojima, Y. ; Kamiya, M.
Author_Institution :
Seiko Instruments Inc., Chiba, Japan
Abstract :
A new method for effective channel length (Leff) determination using the punchthrough phenomenon in short-channel MOSFETs is proposed. The punchthrough voltage of short-channel MOSFETs is a strong function of Leff. Single doped drain and lightly doped drain (LDD) MOSFETs were evaluated by means of this method, which is called the punchthrough method. The punchthrough method gave excellent results in terms of relative measurement accuracy, reproducibility, and resolution. The Leff determined by the punchthrough method does not depend on the parasitical resistance of the source and drain region. Because of its high resolution and simplicity, this punchthrough method can be very useful for Leff monitoring in manufacturing
Keywords :
insulated gate field effect transistors; production testing; semiconductor device manufacture; semiconductor device testing; effective channel length; lightly doped drain; manufacturing; measurement accuracy; parasitical resistance; punchthrough voltage; reproducibility; resolution; short-channel MOSFETs; single doped drain; Electric resistance; Electrical resistance measurement; Electrodes; Fabrication; Instruments; MOSFETs; P-n junctions; Reproducibility of results; Very large scale integration; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185941
