An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE M)53 and BSIM models

Author

Karlsson, Peter R. ; Jeppson, Kjell O.

Author_Institution

Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1992

fDate

16-19 Mar 1992

Firstpage

78

Lastpage

83

Abstract

A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm

Keywords

SPICE; insulated gate field effect transistors; semiconductor device models; BSIM models; DC parameters; MOS transistor; MOS3 model; SPICE; data points; direct parameter extraction algorithm; series resistance; transistor models; transistor parameters; Data mining; Equations; Geometry; MOSFETs; Noise measurement; Parameter extraction; Production control; SPICE; Solid state circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185942

Filename

185942