DocumentCode
2899476
Title
Low-frequency noise in triple-gate n-channel bulk FinFETs
Author
Simoen, E. ; Aoulaiche, M. ; Collaert, N. ; Claeys, C.
Author_Institution
Imec, Leuven, Belgium
fYear
2011
fDate
12-16 June 2011
Firstpage
127
Lastpage
130
Abstract
The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.
Keywords
1/f noise; MOSFET; semiconductor device noise; silicon; silicon compounds; silicon-on-insulator; 1/f noise; GR noise; SiON; SiON gate dielectric; fin length; gate oxide; generation-recombination noise; low-frequency noise; multiple-gate transistor; n-channel bulk MuGFET; size 2.5 nm; triple-gate n-channel bulk FinFET; FinFETs; Logic gates; Low-frequency noise; Silicon; Silicon on insulator technology; 1/f noise; GR noise; bulk MuGFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994280
Filename
5994280
Link To Document