Title :
Development of copper-copper bonding by ultrasonic welding for IGBT modules
Author :
Kido, Kazumasa ; Momose, Fumihiko ; Nishimura, Yoshitaka ; Goto, Tomoaki
Author_Institution :
Semicond. Group, Fuji Electr. Syst. Co., Ltd., Nagano, Japan
fDate :
Nov. 30 2010-Dec. 2 2010
Abstract :
In this paper, we present the copper-copper bonding technique by ultrasonic welding for the copper terminals of large current, high reliability IGBT modules. Investigated topics are joint strength indicated from joint microstructure, the effect of copper hardness on joint strength, the relationship between terminal bonding location and the damage to the insulator layer in the module structure, and reliability estimation of large IGBT modules with ultrasonic welding comparing with conventional soldering.
Keywords :
copper; insulated gate bipolar transistors; lead bonding; modules; semiconductor device metallisation; semiconductor device reliability; ultrasonic welding; Cu-Cu; IGBT modules; copper-copper bonding; high reliability IGBT module; insulator layer damage; joint microstructure; joint strength; module structure; reliability estimation; ultrasonic welding; Acoustics; Bonding; Copper; Insulated gate bipolar transistors; Joints; Stress; Welding;
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-8825-4
DOI :
10.1109/IEMT.2010.5746751
