A new method for electrically measuring thin-film thickness of SOI MOSFETs

Author

Yamazaki, Hiroshi ; Ando, Satoshi ; Horie, Hiroshi ; Hijiya, Shinpei

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1992

fDate

16-19 Mar 1992

Firstpage

125

Lastpage

128

Abstract

The authors have developed a method for electrically measuring the silicon film thickness and the back oxide thickness of thin-film silicon-on-insulator (SOI) MOSFETs. These film thicknesses can be determined from the dependence of threshold voltage on back gate voltages. This method has good accuracy because of the consideration of the carrier distribution, and the consistency of the threshold voltage definition in both measurement and analysis. The calculated Si thickness of a double-gate SOI MOSFET agrees well with the thickness measured from a cross-sectional SIM (scanning ion microscopy) image

Keywords

insulated gate field effect transistors; ion microscopy; semiconductor-insulator boundaries; thickness measurement; SOI MOSFETs; back gate voltages; carrier distribution; cross-sectional SIM; double-gate device; thin-film thickness; threshold voltage; Electric variables measurement; Electrical resistance measurement; Equations; MOSFETs; Semiconductor films; Semiconductor thin films; Silicon; Thickness measurement; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185953

Filename

185953