Title :
Frozen noise origin of temporal low-frequency noise in electronic devices
Author :
Marinov, Ognian ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
Abstract :
In this work, we show that the 1/f noise can originate from temporal accumulation of structural variance in electronic devices. We compare results of our calculations to published data and we critically discuss the advantages and limitations relevant to the use of the spatial variations for explanation of the low-frequency noise in MOS transistors.
Keywords :
1/f noise; MOSFET; semiconductor device noise; 1/f noise; MOS transistor; electronic devices; frozen noise; structural variance; temporal low-frequency noise; Germanium; Low-frequency noise; MOSFETs; Rough surfaces; Silicon; Surface roughness; LFN; spatial variance and temporal low-frequency noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994288
