An optical measurement method for PN junction depth

Author

Yie, He ; Yafa Shen

Author_Institution

Microelectron. Center, Southeast Univ., Nanjing, China

fYear

1992

fDate

16-19 Mar 1992

Firstpage

166

Lastpage

169

Abstract

The light spectrum response of a pn junction structure was analyzed using a one-dimensional photodiode simulator. With the numerical modeling of a one-dimensional photodiode structure, a monotonic relationship of wavelength at the light spectrum peak response versus pn junction depth is derived. An optical measurement method for pn junction depth is presented. From the comparison of simulated and measured light wavelength of the peak optical response, the pn junction depth can be uniquely determined, achieving a reasonable accuracy for different depths of the junction. Some experimental results are given to support the validity of the optical measurement method

Keywords

optical variables measurement; photodiodes; semiconductor device testing; PN junction depth; light spectrum peak response; light spectrum response; monotonic relationship; numerical modeling; one-dimensional photodiode simulator; optical measurement method; peak optical response; wavelength; Absorption; Charge carrier processes; Electrical resistance measurement; Electron mobility; Numerical models; Optical devices; Photoconductivity; Photodiodes; Silicon; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0535-3

Type

conf

DOI

10.1109/ICMTS.1992.185961

Filename

185961