Title :
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
Author :
Rodilla, H. ; Vasallo, B.G. ; Mateos, J. ; Moschetti, G. ; Grahn, J. ; González, T.
Author_Institution :
Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic fT and fmax have been obtained and compared with experimental data, getting a good agreement for fT but some discrepancies for fmax. Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (Fmin=0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; DC behavior; InAs-AlSb; InGaAs; Monte Carlo study; extrinsic noise characteristics; frequency 10 GHz; intrinsic noise characteristics; intrinsic small signal equivalent circuit parameters; isolated-gate HEMT; size 225 nm; size 50 nm; HEMTs; Indium gallium arsenide; Integrated circuit modeling; Logic gates; MODFETs; Monte Carlo methods; Noise; InAs/AlSb HEMTs; Monte Carlo simulations; noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994295
