Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

Author

Rodilla, H. ; Vasallo, B.G. ; Mateos, J. ; Moschetti, G. ; Grahn, J. ; González, T.

Author_Institution

Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2011

fDate

12-16 June 2011

Firstpage

184

Lastpage

187

Abstract

In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic f_T and f_max have been obtained and compared with experimental data, getting a good agreement for f_T but some discrepancies for f_max. Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F_min=0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; DC behavior; InAs-AlSb; InGaAs; Monte Carlo study; extrinsic noise characteristics; frequency 10 GHz; intrinsic noise characteristics; intrinsic small signal equivalent circuit parameters; isolated-gate HEMT; size 225 nm; size 50 nm; HEMTs; Indium gallium arsenide; Integrated circuit modeling; Logic gates; MODFETs; Monte Carlo methods; Noise; InAs/AlSb HEMTs; Monte Carlo simulations; noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994295

Filename

5994295