DocumentCode :
2899760
Title :
Non-aligned arrays of zinc oxide nanowires: fabrication and field emission properties
Author :
Zhang, Gengmin ; Chen, Liang ; Zhang, Qifeng
Author_Institution :
Dept. of Electron., Peking Univ., Beijing, China
fYear :
2004
fDate :
6-10 Sept. 2004
Firstpage :
120
Lastpage :
122
Abstract :
In the search for a good field emitter to be used in future field emission displays (FEDs), we have fabricated arrays of zinc oxide nanowires (ZnO NWs) on silicon wafers by the method of thermal evaporation and then measured their field emission performance. When the fabrication conditions were properly controlled, randomly oriented ZnO NWs directly grew on the Si substrate and uniform field emission was attained from the whole sample surface.
Keywords :
elemental semiconductors; field emission displays; nanowires; silicon; zinc compounds; ZnO; field emission displays; field emission performance; field emission properties; field emitter; nonaligned arrays; silicon wafers; thermal evaporation; zinc oxide nanowires; Anodes; Argon; Boats; Fabrication; Nanowires; Powders; Scanning electron microscopy; Silicon; Temperature sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
Type :
conf
DOI :
10.1109/IVESC.2004.1414157
Filename :
1414157
Link To Document :
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