Title :
Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes
Author :
Abdul Manaf, Nor Azlian ; Alias, Mohd Sharizal ; Mitani, Sufian Mousa ; Yahya, Mohamed Razman
Author_Institution :
TM Innovation Centre, TM R&D, Cyberjaya, Malaysia
fDate :
Nov. 30 2010-Dec. 2 2010
Abstract :
The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser beams; quantum well lasers; ridge waveguides; waveguide lasers; GaInNAs; approximately saturated threshold current density; crystalline quality; differential quantum efficiency; emission wavelengths; long wavelength lasers; multiple quantum well laser; ridge-waveguide laser diodes; wavelength 1310 nm; Gallium arsenide; Quantum well lasers; Stimulated emission; Threshold current; Variable speed drives;
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2010 34th IEEE/CPMT International
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-8825-4
DOI :
10.1109/IEMT.2010.5746766