DocumentCode :
2899847
Title :
Advanced modeling of oxide defects for random telegraph noise
Author :
Goes, W. ; Schanovsky, F. ; Grasser, T. ; Reisinger, H. ; Kaczer, B.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
204
Lastpage :
207
Abstract :
The results from a recently developed measurement technique, called time-dependent defect spectroscopy (TDDS), have shed new light on reliability issues, such as random telegraph noise (RTN) and the negative bias instability (NBTI). It has been found that established models fail to explain these findings. A refined charge trapping model is suggested by assuming additional metastable defect configurations. Thereby, we can give an explanation for the new TDDS findings while remaining consistent with results obtained from conventional RTN analysis.
Keywords :
MOSFET; random noise; semiconductor device reliability; MOSFET; metastable defect configurations; negative bias instability; oxide defects; random telegraph noise; refined charge trapping model; reliability issues; time-dependent defect spectroscopy; Charge transfer; Logic gates; Noise; Potential energy; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994301
Filename :
5994301
Link To Document :
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