Title :
Suppression of measurement errors in effective-MOSFET-channel-length extraction
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
The effects of measurement errors in effective-MOSFET-channel-length extraction are estimated, both numerically and experimentally. In the numerical estimation, the errors in the least-squares method, which was used twice in the extraction, are calculated for several reference MOSFET combinations. In the experimental estimation, the errors in the extracted channel lengths were estimated, changing the reference MOSFET combinations. It is found, from these estimations, that choosing both short- and long-channel MOSFETs as reference MOSFETs is effective in suppressing measurement errors
Keywords :
insulated gate field effect transistors; least squares approximations; length measurement; measurement errors; effective-MOSFET-channel-length extraction; least-squares method; long-channel MOSFETs; measurement errors; numerical estimation; reference MOSFET combinations; short-channel MOSFETs; Electrical resistance measurement; Estimation error; Laboratories; Least squares methods; Length measurement; Linearity; MOSFET circuits; Measurement errors; Microelectronics; National electric code;
Conference_Titel :
Microelectronic Test Structures, 1992. ICMTS 1992. Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0535-3
DOI :
10.1109/ICMTS.1992.185971
