Title :
Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs
Author :
Hu, Chih-Chan ; Hsin, Yue-Ming ; Dong-Ming Lin ; Huang, Chien-Chang ; Lin, Cheng-Kuo ; Wang, Yu-Chi
Author_Institution :
Syst. Manuf. Center, Chung-Shan Inst. of Sci. & Technol., Taipei, Taiwan
Abstract :
In this study, we compare the noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs in the frequency range of 1 to 18 GHz. The studied devices including dual-gate enhancement-/enhancement-mode (E/E-mode) and enhancement-/depletion-mode (E/D-mode) pHEMTs were fabricated on the same wafer by the different gate metallization. The minimum noise figure (NFmin) and associated gain (GA) are discussed with power and linearity performance at the same bias conditions. The dual-gate E/E- and E/D-mode devices have demonstrated low noise and high gain performance, and are equivalent to the cascode configuration for compact size as compared to a cascode low noise amplifier.
Keywords :
gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; AlGaAs-InGaAs; bias conditions; cascode configuration; cascode low noise amplifier; dual-gate pHEMT; enhancement-depletion-mode; frequency 1 GHz to 18 GHz; gate enhancement-enhancement-mode; gate metallization; linearity performance; noise characteristics; power performance; Frequency measurement; Logic gates; Microwave circuits; Noise; PHEMTs; Performance evaluation; associated gain; depletion-mode; dual-gate; enhancement-mode; low noise amplifier; minimum noise figure;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994303
