DocumentCode :
2899889
Title :
High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions
Author :
Mahi, Fatima Zohra ; Varani, Luca ; Shiktorov, P. ; Starikov, E. ; Gruzhinskis, V.
Author_Institution :
Phys. of Semicond. Devices Lab., Univ. of Bechar, Bechar, Algeria
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
216
Lastpage :
219
Abstract :
In this contribution we propose an analytical approach for the calculation of the high-frequency noise spectrum of frequency multipliers based on n+n-metal Schottky-barrier diodes and n+n - barrier - nn+ Heterostructure-barrier varactors. The model includes a diodes operating in series with a parallel resonant circuit to extract the harmonics generated in the terahertz frequency region.
Keywords :
Schottky diodes; computational complexity; frequency multipliers; semiconductor device noise; varactors; cyclostationary conditions; frequency multipliers; heterostructure barrier varactor; high-frequency noise spectrum; high-frequency voltage noise; nanometric Schottky-barrier diodes; parallel resonant circuit; terahertz frequency region; Harmonic analysis; Mathematical model; Noise; RLC circuits; Resonant frequency; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994304
Filename :
5994304
Link To Document :
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