Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

This work presents a theoretical study on the 1/f low frequency noise (LFN) based on the fluctuations in the number of carriers in the two-dimensional electron gas (2DEG) channel of AlGaN/GaN self-aligned HFETs. This study validates the role of thermally activated trap levels on 1/f LFN characteristics. Simulation results confirm that the low frequency noise behavior follows characteristic of 1/f^γ with frequency exponent β between 0 and 2. At room temperature the simulation results are compared with the experiments. The effect of temperature is also studied on the noise behavior. It is found that the frequency exponent can vary with temperature.