Title :
Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions
Author_Institution :
Rockwell Int. Corp., Anaheim, CA, USA
Abstract :
Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; 1.25 GHz; 15.3 dB; 800 muW; DC power consumptions; GaAs wafers; MMIC amplifiers; enhancement-mode MESFET; gain/power quotient; low-noise amplifiers; monolithic L-band LNAs; total power consumption; ultralow power consumptions; yield; Energy consumption; Frequency; Gain; Integrated circuit yield; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185984
