A novel MMIC PHEMT low noise amplifier for GPS applications

Author

Morkner, H. ; Frank, M. ; Kishimura, R.

Author_Institution

Avantek, Santa Clara, CA, USA

fYear

1992

fDate

1-3 June 1992

Firstpage

13

Lastpage

16

Abstract

A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek´s PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; satellite relay systems; spread spectrum communication; 0.2 micron; 0.25 dB; 0.5 to 3 GHz; 1.7 dB; 15 dB; GPS; Global Positioning System; LNA; MMIC PHEMT low noise amplifier; SOT-143 surface mount package; gate lengths; monolithic two-stage pseudomorphic high-electron-mobility transistor; on-chip matching; plastic 86 surface mount package; resistive feedback; source follower second stage; spread spectrum bands; Feedback; Gain measurement; Global Positioning System; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; PHEMTs; Plastics; Spread spectrum communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.185985

Filename

185985