Title :
Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC
Author :
Helms, D.R. ; Fithian, M.J.
Author_Institution :
GE Electronics Lab., Syracuse, NY, USA
Abstract :
A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<>
Keywords :
MMIC; feedback; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 0.25 micron; 11.4 to 12.4 GHz; 150 mW; 25 dB; HEMT; feedback design; gain flatness; gate length; power dissipation; process insensitivity; three stage Ku-band MMIC amplifier; Feedback amplifiers; Frequency; Gain; HEMTs; Linearity; MESFETs; MMICs; Power amplifiers; Power dissipation; Virtual manufacturing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185986
