Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs

Author

Sanctuary, J. ; Woodin, C.E. ; Manning, J.

Author_Institution

Loockheed Sanders, Nashua, NH, USA

fYear

1992

fDate

1-3 June 1992

Firstpage

25

Lastpage

28

Abstract

A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; ion implantation; microwave amplifiers; wideband amplifiers; 0.25 micron; 10 dB; 16 dB; 2 to 18 GHz; 2.5 dB; 3 dB; GaAs; MMIC LNAs; broadband amplifiers; insertion gains; ion-implant-process; low noise amplifiers; noise figures; Broadband amplifiers; Gain; Gallium arsenide; Integrated circuit manufacture; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.185988

Filename

185988