Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET

Author

Pascual, Elena ; Rengel, Raúl ; Martín, María J.

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2011

fDate

12-16 June 2011

Firstpage

230

Lastpage

233

Abstract

This paper is focused on the analysis of the high-frequency dynamic and noise performance and the static characteristics of n-type Schottky barrier (SB) MOSFETs on SOI substrate. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been carefully considered. The influence of the underlap length on the main figures of merit is described, thus showing the importance of this architecture parameter for the optimization of these devices.

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; semiconductor device noise; silicon-on-insulator; 2D ensemble Monte Carlo simulator; RF noise performance; SOI substrate; Schottky interfaces; figures of merit; high-frequency dynamic performance; image charge effects; n-type Schottky barrier MOSFET; quantum transmission coefficients; static characteristics; tunnelling transport; underlap length; Logic gates; MOSFET circuits; Metals; Monte Carlo methods; Noise; Schottky barriers; Tunneling; Monte Carlo Simulator; Schottky Barrier MOSFET; noise performance; underlap length;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2011 21st International Conference on

Conference_Location

Toronto, ON

Print_ISBN

978-1-4577-0189-4

Type

conf

DOI

10.1109/ICNF.2011.5994310

Filename

5994310