DocumentCode
2900056
Title
Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors
Author
Sydoruk, V.A. ; Petrychuk, M.V. ; Ural, A. ; Bosman, G. ; Offenhäusser, A. ; Vitusevich, S.A.
Author_Institution
Inst. of Bio- & Nanosyst., Forschungszentrum Julich, Julich, Germany
fYear
2011
fDate
12-16 June 2011
Firstpage
238
Lastpage
241
Abstract
We report results of noise spectroscopy of field-effect transistors (FETs) fabricated based on individual carbon nanotube (CNT) using back-gate topography. The registered noise spectra allow us to estimate the numbers of carriers in working point with maximal transconductance. Lorentzian-shape noise components were analyzed in wide temperature range. The analysis enables us to find the energy, position and concentration of traps in the CNT-FET structures.
Keywords
carbon nanotubes; field effect transistors; semiconductor device noise; C; Lorentzian-shape noise component; back-gate topography; maximal transconductance; noise spectroscopy characterization; single wall CNT-FET; single wall carbon nanotube field-effect transistor; transport property; FETs; Logic gates; Noise; Temperature; Temperature measurement; Transconductance; Voltage measurement; carbon nanotubes; field-effect transistors; noise properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994312
Filename
5994312
Link To Document