Title :
12 W monolithic X-band HBT power amplifier
Author :
Khatibzadeh, M.A. ; Bayraktaroglu, B. ; Kim, T.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
Monolithic, two-stage X-band power amplifiers were designed and fabricated using AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Output power levels of up to 12.5 W continuous wave (CW) were demonstrated at 9.2 GHz from single-chip HBT amplifiers measuring 3.8 mm*4.7 mm in size. Two amplifier designs were fabricated using optimized 300- mu m common-emitter unit cells. Device and circuit design aspects of this work are presented along with measured data on the performance of the power amplifiers. The high CW output power level at X-band frequencies highlights the advantages of HBT technology for microwave solid-state power applications.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; 12.5 W; 9.2 GHz; AlGaAs-GaAs; CW output power level; circuit design; common-emitter unit cells; microwave solid-state power; monolithic X-band HBT power amplifier; two-stage X-band power amplifiers; Circuit synthesis; Design optimization; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave technology; Power amplifiers; Power generation; Power measurement; Size measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185994
