DocumentCode
2900119
Title
High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band
Author
Tserng, H.Q. ; Saunier, P. ; Kao, Y.-C.
Author_Institution
Texas Instruments Inc., Dallas, TX, USA
fYear
1992
fDate
1-3 June 1992
Firstpage
51
Lastpage
54
Abstract
The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; wideband amplifiers; 27 to 34 GHz; 40 percent; 500 mW; 7 GHz; AlGaAs-InGaAs-GaAs; Ka-band; broadband monolithic pseudomorphic HEMT amplifiers; doped channel power pseudomorphic high-electron-mobility transistors; output powers; power-added-efficiencies; Broadband amplifiers; Circuits; Frequency; High power amplifiers; Indium gallium arsenide; MMICs; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location
Albuquerque, NM, USA
Print_ISBN
0-7803-0677-5
Type
conf
DOI
10.1109/MCS.1992.185995
Filename
185995
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