Title :
High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band
Author :
Tserng, H.Q. ; Saunier, P. ; Kao, Y.-C.
Author_Institution :
Texas Instruments Inc., Dallas, TX, USA
Abstract :
The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; wideband amplifiers; 27 to 34 GHz; 40 percent; 500 mW; 7 GHz; AlGaAs-InGaAs-GaAs; Ka-band; broadband monolithic pseudomorphic HEMT amplifiers; doped channel power pseudomorphic high-electron-mobility transistors; output powers; power-added-efficiencies; Broadband amplifiers; Circuits; Frequency; High power amplifiers; Indium gallium arsenide; MMICs; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.185995
