Title :
Development of the S-band high power klystron with bandwidth of 12%
Author :
Wang, Yong ; Zhang, Jian ; Wang, Ying ; Zhang, Zhi-qiang
Author_Institution :
Key Lab. of High Power Microwave Sources & Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
The development of broadband high power klystron has being done in the Institute of Electronics, Chinese Academy of Sciences (IECAS), and the breakthrough of the bandwidth of klystron has been obtained continuously. In S-band, after the achievement of 10% and 11% bandwidth, the relative instantaneous bandwidth of 12% has been brought to success in 2009. The paper introduces the design, simulation and test results of this klystron in detail.
Keywords :
bandwidth allocation; klystrons; Chinese Academy of Sciences; IECAS; Institute of Electronics; S-band high power klystron; broadband high power klystron; klystron bandwidth; relative instantaneous bandwidth; Bandwidth; Broadband communication; Cavity resonators; Couplings; Klystrons; Radar; Lower peak power; S-band klystron; bandwidth of 12%;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2011 IEEE International
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-8662-5
DOI :
10.1109/IVEC.2011.5746861
