Title :
An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications
Author :
Casao, J.A. ; Dorta, P. ; Caceres, J.L. ; Salazar-Palma, M. ; Perez, J.
Author_Institution :
Dpto. Senales, Sistemas y Radiocommunicaciones, Univ. Politecnica de Madrid, Spain
Abstract :
The design, implementation, and test results of a simple GaAs MMIC transimpedance amplifier with enhanced performance for high-speed optical communications is described. A cascode configuration, improved in terms of bandwidth and noise, was used. On-wafer and on-carrier measurements showed close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption were obtained. The temperature and bias point sensitivity were negligible. The electrical results were very close to the theoretical limits of the structure.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; optical communication equipment; 0 to 1.6 GHz; GaAs; bandwidth; bias point sensitivity; cascode configuration; monolithic transimpedance amplifier; noise; on-carrier measurements; optical communications; power consumption; Bandwidth; Gallium arsenide; Low-noise amplifiers; MMICs; Optical amplifiers; Optical design; Optical fiber communication; Optical noise; Semiconductor optical amplifiers; Testing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0677-5
DOI :
10.1109/MCS.1992.186015
