Title :
Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication
Author :
Ouarets, S. ; Orsal, B. ; Lahrichi, M. ; Achouche, M.
Author_Institution :
CNRS, Electron. Inst. of South, Montpellier, France
Abstract :
We show for the first time, the results concerning low frequency noise (1HZ-10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.
Keywords :
1/f noise; III-V semiconductors; aluminium alloys; aluminium compounds; avalanche photodiodes; gallium compounds; indium compounds; APD; AlInAs-GaInAs-InP; InP; avalanche photodiode; frequency 1 Hz to 10 kHz; low frequency noise; multiplication noise; optoelectronic 1/f noise; photonic instrumentation; telecommunication; Avalanche photodiodes; Dark current; Indium phosphide; Leakage current; Optical noise; White noise; 1/f noise; avalanche photodiode; corner frequency; excess noise coefficient; noise equivalent power; white noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994330
