DocumentCode
2900483
Title
SiGe HBT-based active cold load: Design, characterization and stability measurements
Author
de la Jarrige, E. Leynia ; Escotte, L. ; Gonneau, E. ; Goutoule, J.M.
Author_Institution
LAAS, Univ. de Toulouse, Toulouse, France
fYear
2011
fDate
12-16 June 2011
Firstpage
332
Lastpage
335
Abstract
We report experimental results concerning the noise performance and the stability of an active cold load (ACL) realized with an SiGe heterojunction bipolar transistor at microwave frequency (1.4 GHz). The ACL exhibits return loss higher than 35 dB and a noise temperature less than 66 K. Stability measurements performed over 4 months with a dedicated noise injection radiometer indicates that this active load is very stable.
Keywords
Ge-Si alloys; III-V semiconductors; heterojunction bipolar transistors; radiometers; stability; HBT-based active cold load; SiGe; frequency 1.4 GHz; heterojunction bipolar transistor; microwave frequency; noise injection radiometer; stability measurements; Circuit stability; Microwave radiometry; Noise; Noise measurement; Stability analysis; Temperature measurement; Thermal stability; SiGe heterojunction bipolar transistor; active cold load; noise temperature; radiometer; stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location
Toronto, ON
Print_ISBN
978-1-4577-0189-4
Type
conf
DOI
10.1109/ICNF.2011.5994335
Filename
5994335
Link To Document