A Silicon-on-Sapphire Low-Voltage Temperature Sensor for Energy Scavengers

Author

Kaya, Tolga ; Koser, Hur ; Culurciello, Eugenio

Author_Institution

Dept. of Electron. & Commun. Eng., Istanbul Tech. Univ.

fYear

2007

fDate

27-30 May 2007

Firstpage

2455

Lastpage

2458

Abstract

The paper report on the design and test of a low-voltage temperature sensor designed for MEMS power-harvesting systems. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range of 1-1.5V. The prototype was fabricated on a conventional 0.5mum silicon-on-sapphire (SOS) process. The sensor design consumes 15muA of current at 1V. The internal reference voltage is 550mV. The temperature sensor has a digital square wave output whose frequency is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6kHz/degC. The output is also independent of supply voltage in the range of 1-1.5V. Measured results and targeted applications for the proposed circuit were reported.

Keywords

alumina; micromechanical devices; power supplies to apparatus; silicon; temperature sensors; 0.5 micron; 1 to 1.5 V; 15 muA; 550 mV; MEMS; bandgap voltage reference circuit; digital square wave output; energy scavengers; linear model; power-harvesting systems; silicon-on-sapphire; temperature sensor; Circuit testing; Frequency conversion; Micromechanical devices; Photonic band gap; Process design; Prototypes; System testing; Temperature dependence; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.378617

Filename

4253173