A double balanced 3-18 GHz resistive HEMT monolithic mixer

Author

Chen, T.H. ; Chang, K.W. ; Bui, S.B.T. ; Liu, L.C.T. ; Pak, S.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1992

fDate

1-3 June 1992

Firstpage

167

Lastpage

170

Abstract

A double-balanced (DB) 3-18-GHz resistive high electron mobility transistor (HEMT) monolithic mixer has been developed. This mixer consisted of a AlGaAs-InGaAs HEMT quad, an active local oscillator (LO) balun, and two passive baluns, RF and IF. At 16-dBm LO power, this mixer achieved conversion losses of 7.5-9.0 dB for 4-14 GHz RF and 7.5-11.0 dB for 3-18 GHz RF. The simulated conversion loss was in agreement with the measurement results. A third-order input intercept of +26 dBm was achieved for a 10-11 GHz RF and 1 GHz IF at a LO drive of 16 dBm. This design is for a DB resistive HEMT MMIC mixer covering up to 6:1 bandwidth.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; mixers (circuits); 3 to 18 GHz; 7.5 to 11 dB; AlGaAs-InGaAs; HEMT quad; MMIC mixer; SHF; active LO balun; conversion loss; double balanced; local oscillator; mobility transistor; passive baluns; resistive HEMT monolithic mixer; third-order input intercept; Bandwidth; HEMTs; Impedance matching; MESFETs; Microwave circuits; Noise figure; RF signals; Radio frequency; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992

Conference_Location

Albuquerque, NM, USA

Print_ISBN

0-7803-0677-5

Type

conf

DOI

10.1109/MCS.1992.186027

Filename

186027