Title :
Growth of high quality cSiGe p-n double layers for high-efficiency solar cells
Author :
Hansson, P.O. ; Konuma, M. ; Silier, L. ; Bauser, E. ; Albrecht, M. ; Dorsch, W. ; Strunk, H.P.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Abstract :
We have grown silicon-germanium alloys and p-n junctions of high crystal quality on Si substrates by LPE from Bi, Ga, and In solutions at temperatures between 300 and 920°C. The layer thicknesses ranged from 1 nm to 100 μm. Doping levels from 1×1016 to 4×1019 cm-3 were obtainable by using Ga and As as dopants. The carrier mobility values reached 50% of the upper theoretical limit. Average dislocation densities were below 5×10 8 cm-2, even for Ge on Si. Growth rates above 60 nm/sec were for example achieved on 4" substrates. Layers grown from In solution gave us the best data for photovoltaic applications
Keywords :
Ge-Si alloys; carrier mobility; dislocation density; liquid phase epitaxial growth; p-n junctions; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; solar cells; 1 nm to 100 mum; 300 to 920 C; As; Bi; Ga; In; LPE; Si; Si substrates; SiGe; SiGe:Ga,As; average dislocation densities; cSiGe growth; carrier mobility; doping levels; high crystal quality; high quality cSiGe p-n double layers; high-efficiency solar cells; p-n junctions; silicon-germanium alloys; Bismuth; Doping; Gallium alloys; Germanium silicon alloys; P-n junctions; Photovoltaic systems; Silicon alloys; Silicon germanium; Solar power generation; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519957
