Title :
Aerial image analysis for defective masks in optical lithography
Author :
Graf, T. ; Erdmann, A. ; Evanschitzky, P. ; Tollkühn, B. ; Eggers, K. ; Ziebold, R. ; Teuber, S. ; Höllein, I.
Author_Institution :
Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen, Germany
Abstract :
The quality of photomasks in optical lithography is important for the quality of the wafer printing process. Lithography simulation software can be used to compute the influence of mask defects on the aerial or resist image of lithographic processes. The influence of various defect types and defect sizes can be compared and defect severity lists can be established. To investigate the quality of wafer images in current optical lithography different experimental tools such as AIMS and SEM are used to measure mask and wafer structures. Furthermore, it is possible to compare experimental and computational investigations and to calibrate the simulation models for future technology nodes.
Keywords :
masks; optical fabrication; optical images; photolithography; scanning electron microscopy; semiconductor technology; surface topography measurement; AIMS; SEM; aerial image analysis; defect severity; defect sizes; defect types; defective masks; lithographic processes; lithography simulation software; mask defects influence; mask structure measurement; optical lithography; photomasks quality; resist image; simulation model calibration; wafer image quality; wafer printing process quality; wafer structure measurement; Computational modeling; Image analysis; Integrated optics; Lighting; Lithography; Metrology; Optical devices; Polarization; Printing; Space technology;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568228
