Title :
High frequency noise in manufacturable carbon nanotube transistors
Author :
Sakalas, P. ; Schroter, M. ; Bölter, M. ; Claus, M. ; Mothes, S. ; Wang, D.
Author_Institution :
Dept. of Electron Device & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany
Abstract :
HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-finger CNTFETs exhibit still relatively high values for the minimum noise figure (NFmin = 3.5 dB at 1 GHz). Based on detailed compact modeling, the origin of this noise can be explained by the existence of the parasitic network and metallic tubes.high-frequency noise parameters
Keywords :
carbon nanotubes; field effect transistors; semiconductor device manufacture; C; carbon nanotube field-effect transistors; frequency 1 GHz; high frequency noise; metallic tubes; multitube multifinger CNTFET; parasitic network; wafer-scale manufacturable CNTFET; Atmospheric modeling; CNTFETs; CNTFET; Carbon Nanotube; Noise parameters;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994346
