DocumentCode :
2900998
Title :
Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes
Author :
Szewczyk, Arkadiusz ; Cichosz, Jacek
Author_Institution :
Dept. of Optoelectron. & Electron. Syst., Gdansk Univ. of Technol., Gdansk, Poland
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
440
Lastpage :
443
Abstract :
In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.
Keywords :
Schottky diodes; elemental semiconductors; silicon compounds; telegraphy; random telegraph signal; reverse polarized silicon carbide Schottky diodes; reverse voltage; voltage 600 V; Current measurement; Histograms; Noise; Noise measurement; Schottky diodes; Silicon carbide; Voltage measurement; RTS; Schottky diode; SiC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994365
Filename :
5994365
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2900998
بازگشت