Title :
Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy
Author :
Rao, Hemant ; Bosman, Gijs
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
Microwave noise temperature spectroscopy is performed on gated AlGaN/GaN high electron mobility transistors as a function of gate and drain bias. The results are combined with low frequency noise (LFN) spectroscopy to understand device degradation and specific mechanisms responsible for it. It was found that channel noise temperature shows a strong dependence to channel voltage. On the other hand self-heating related power dissipation is weakly correlated to the measured noise temperature. This indicates that microwave noise temperature can act as a useful reliability characterization tool.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave spectra; semiconductor device noise; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; HEMT; LFN spectroscopy; channel voltage; drain bias; gate bias; high electron mobility transistor; low frequency noise temperature spectroscopy; microwave noise temperature spectroscopy; noise temperature measurement; power dissipation; semiconductor device reliability; Degradation; Gallium nitride; Logic gates; MODFETs; Noise; Noise measurement; Temperature measurement; AlGaN/GaN HEMTs; hot-electron; low frequency noise; microwave noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
DOI :
10.1109/ICNF.2011.5994370
