DocumentCode :
2901288
Title :
Modelling of magnetoresistive micro-sensors
Author :
Hill, E.W.
Author_Institution :
Sch. of Eng., Manchester Univ., UK
fYear :
1999
fDate :
1999
Firstpage :
42552
Lastpage :
42555
Abstract :
In order to simulate magnetoresistive devices a set of simple models have been defined which allow the calculation of the resistance as a function of magnetic field for a given device geometry. The physical parameters of the model can be entered in a SPICE model statement. This model statement is then translated to an equivalent circuit using a SPICE pre-processor. The model of the MR element consists of a linear resistor and a nonlinear voltage controlled voltage source. In order to simulate the effect of applied magnetic fields, a voltage across a dummy resistor is used to represent the applied field. Track capacitance and inductance are also included in the model
Keywords :
magnetoresistive devices; AMR effect; GMR effect; MR element model; SPICE model statement; device geometry; equivalent circuit; linear resistor; magnetic field; magnetoresistive microsensors; nonlinear VCVS; nonlinear voltage controlled voltage source; physical parameters; track capacitance; track inductance;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Microengineering, Modelling and Design (Ref. No. 1999/052), IEE Seminar on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990278
Filename :
773164
Link To Document :
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