DocumentCode :
2901359
Title :
Theoretical approach to the stoichiometric feature of field emission from AlxGa1-xN
Author :
Choi, Tai S. ; Chung, M.S.
Author_Institution :
Dept. of Phys., Ulsan Univ., South Korea
fYear :
2004
fDate :
6-10 Sept. 2004
Firstpage :
259
Lastpage :
261
Abstract :
The field emission current density j from the ternary alloy AlxGa1-xN is calculated as a function of a stoichiometric composition x for 0≤x≤1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of AlxGa1-xN. A full calculation is made to obtain the exact j from AlxGa1-xN as a function of x and the field F. Then we found the stoichiometric dependence of field emission from AlxGa1-xN by analyzing the effects of both the electron affinity and the carrier concentration.
Keywords :
III-V semiconductors; alloys; aluminium compounds; carrier density; current density; electron affinity; field emission; stoichiometry; AlxGa1-xN; AlGaN; carrier concentration; electron affinity; field emission current density; internal field emission; stoichiometric composition; stoichiometric dependence; stoichiometric feature; Aluminum alloys; Cathodes; Current density; Doping; Electron emission; Gallium alloys; Ionization; Moon; Physics; Schottky barriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
Type :
conf
DOI :
10.1109/IVESC.2004.1414225
Filename :
1414225
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2901359
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