Title :
BiCMOS submicron compiler memories
Author :
Drummond, John ; Lepkowski, Marlene
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An advanced submicron BiCMOS process and an ASIC memory compiler are discussed. The BICMOS process uses bipolar transistors to enhance the fast CMOS transistors by driving heavily loaded nodes at high speeds. The multiple layers of metal in the process significantly increase the gate density available for system-level design
Keywords :
BIMOS integrated circuits; SRAM chips; VLSI; application specific integrated circuits; read-only storage; ASIC memories; ASIC memory compiler; BiCMOS submicron compiler memories; bipolar transistors; gate density; multilayer metal; submicron BiCMOS process; system-level design; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; Instruments; Integrated circuit interconnections; Libraries; Random access memory; Read only memory; Read-write memory;
Conference_Titel :
ASIC Seminar and Exhibit, 1990. Proceedings., Third Annual IEEE
Conference_Location :
Rochester, NY
DOI :
10.1109/ASIC.1990.186106
