Title :
InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm
Author :
Ok, Seong Hae ; Byun, Young Tae ; Son, Chang Wan ; Moon, Yon Tae ; Choi, Young Wan ; Oh, Jae Eung ; Lee, Seungho ; Jhon, Young Min ; Woo, Deok Ha ; Lee, Seok ; Kim, Sun Ho
Author_Institution :
Photonics Res. Centre, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
The III-V bulk and multiple quantum well (MQW) semiconductor electrooptic (EO) modulators have been successfully demonstrated with high modulation bandwidths. However, one of the drawbacks is a high switching voltage. This is mainly due to small EO coefficients of III-V semiconductor materials. Quantum dot (QD) devices have been predicted to be superior to bulk or MQW devices in optical nonlinearities and enhanced EO effects.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical effects; electro-optical modulation; gallium arsenide; indium compounds; nonlinear optics; semiconductor quantum dots; semiconductor quantum wells; III-V semiconductor material; InAs-InGaAs; electrooptic coefficient; electrooptic modulator; modulation bandwidth; multiple quantum well device; optical nonlinearity; quantum dot device; semiconductor quantum well; Bandwidth; Electrooptic modulators; III-V semiconductor materials; Indium gallium arsenide; Optical devices; Optical modulation; Quantum dots; Quantum well devices; Semiconductor materials; Voltage;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568280
