• DocumentCode
    2901597
  • Title

    1/ƒ noise in ZnO films

  • Author

    Yang, L. ; Leroy, G. ; Gest, J. ; Vandamme, L.K.J.

  • Author_Institution
    ULCO UDSMM, Univ Lille Nord de France, Calais, France
  • fYear
    2011
  • fDate
    12-16 June 2011
  • Firstpage
    90
  • Lastpage
    93
  • Abstract
    We have investigated the low-frequency noise of ZnO film deposited by dc sputtering technique on glass substrate. We characterized the noise below 100kHz and obtained classical 1/f spectra. We attempted to verify the validity of Hooge´s empirical relation and to test its usefulness as a diagnostic tool. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise results depend strongly on illumination.
  • Keywords
    1/f noise; II-VI semiconductors; electrical resistivity; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 1/f noise; Hooge empirical relation; SiO2; ZnO; dc sputtering; diagnostic tool; films; glass substrate; illumination; sheet resistance; Conductivity; Films; Lighting; Noise; Noise measurement; Substrates; Zinc oxide; ZnO films; diagnostic tool; noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2011 21st International Conference on
  • Conference_Location
    Toronto, ON
  • Print_ISBN
    978-1-4577-0189-4
  • Type

    conf

  • DOI
    10.1109/ICNF.2011.5994393
  • Filename
    5994393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2901597