DocumentCode :
2901597
Title :
1/ƒ noise in ZnO films
Author :
Yang, L. ; Leroy, G. ; Gest, J. ; Vandamme, L.K.J.
Author_Institution :
ULCO UDSMM, Univ Lille Nord de France, Calais, France
fYear :
2011
fDate :
12-16 June 2011
Firstpage :
90
Lastpage :
93
Abstract :
We have investigated the low-frequency noise of ZnO film deposited by dc sputtering technique on glass substrate. We characterized the noise below 100kHz and obtained classical 1/f spectra. We attempted to verify the validity of Hooge´s empirical relation and to test its usefulness as a diagnostic tool. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise results depend strongly on illumination.
Keywords :
1/f noise; II-VI semiconductors; electrical resistivity; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; 1/f noise; Hooge empirical relation; SiO2; ZnO; dc sputtering; diagnostic tool; films; glass substrate; illumination; sheet resistance; Conductivity; Films; Lighting; Noise; Noise measurement; Substrates; Zinc oxide; ZnO films; diagnostic tool; noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2011 21st International Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4577-0189-4
Type :
conf
DOI :
10.1109/ICNF.2011.5994393
Filename :
5994393
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2901597
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